Quantcast
  Facebook Connect Twitter Connect RSS Feeds
  • Brands
  • Search
  • Contact
Samsung Announces DDR 2.0 Multi-Level-Cell Memory

Samsung announced today that it will be the first in the industry to produce a high-performance toggle DDR 2.0 multi-level-cell memory chip. The NAND flash chip will feature a 64GB density, this is made possible through advanced 20 nanometer process technology. The chip was specifically built to support high-performance requirements of mobile devices such as smartphones, tablets and solid state drives.

The new memory contains a very powerful DDR 2.0 interface and the 64GB MLC chip can transmit data at a bandwidth of up to 400Mbps. This provides a 10x faster increase than SDR (single-data rate) memory and a 3x increase over 133Mbps toggle DDR 1.0, 32GB NAND flash memory.

VP of memory sales & marketing stated “With this 20nm-class, 64Gb, toggle DDR 2.0 NAND, Samsung is leading the market, which is evolving to fourth-generation smartphones and SATA 6Gbps SSDs…We will continue to aggressively develop the world’s most advanced toggle DDR NAND flash solutions with higher performance and density, since we see them as vital to enabling a greater diversity of services for mobile phone users worldwide.” If you thought computers reached max capacity, think again, we are just getting started and computers are still a relatively new technology. Just imagine what computers will be like in ten to twenty years. Heck, I can’t even imagine the next five years. Check out the video below to learn more about 25nm Triple-Level Cell NAND when it came out six months ago.


Photo Courtesy of LGEPR
Photo Courtesy of akihabara